Semiconductor Memory Structure

ABSTRACT

A semiconductor device includes a program word line and a read word line over an active region. Each of the program word line and the read word line extends along a line direction. Moreover, the program word line engages a first transistor channel and the read word line engages a second transistor channel. The semiconductor device also includes a first metal line over and electrically connected to the program word line and a second metal line over and electrically connected to the read word line. The semiconductor device further includes a bit line over and electrically connected to the first active region. Additionally, the program word line has a first width along a channel direction perpendicular to the line direction; the read word line has a second width along the channel direction; and the first width is less than the second width.

BACKGROUND

Among semiconductor memory devices, non-volatile memory (NVM) devicescan be used to store data even if power to the memory device is turnedoff. In various examples, NVM devices may include read only memory(ROM), magnetic memory, optical memory, or flash memory, among othertypes of NVM devices. Different types of NVM devices may be programmedonce, a few times, or many times. NVM devices that are programmed once,after which they cannot be rewritten, are referred to as one-timeprogrammable (OTP) NVM devices. OTP NVM devices are often used forembedded NVM applications because of their compatibility to existingprocesses, scalability, reliability, and security. Depending on thetarget application, device requirements, or process requirements, OTPNVM devices may be implemented using floating gate, e-fuse, or antifusetechnology.

Regardless of the technology used to implement an OTP NVM device, cellcurrent (I_(cell)) plays an important role in NVM device operation. Byway of example, degraded cell current may result in device failure(e.g., such as read failure). Further, it is known that a program wordline (WLP) voltage is correlated to the cell current. In some examples,increased gate resistance may cause an undesirable parasitic voltagedrop that results in a degraded WLP voltage for a given memory cell,which can result in degraded cell current and device failure.

Thus, existing techniques have not proved entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when they are read with the accompanying figures.It is noted that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a layout view of a portion of the semiconductor memorystructure in accordance with some embodiments of the present disclosure.

FIGS. 2A, 2B are flow charts of a method for fabricating a semiconductormemory structure according to various aspects of the present disclosure.

FIGS. 3, 4, 5, 6, 7, 8, 9, 10, and 11 are diagrammatic cross-sectionalviews of a portion of the semiconductor memory structure of the presentdisclosure, at various processing stages, according to various aspectsof the present disclosure.

FIG. 12 is a layout view of a portion of the semiconductor memorystructure in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Among semiconductor memory devices, non-volatile memory (NVM) devicescan be used to store data even if power to the memory device is turnedoff. NVM devices may include read only memory (ROM), magnetic memory,optical memory, or flash memory, where various types of NVM devices maybe programmed once, a few times, or many times. NVM devices that areprogrammed once, after which they cannot be rewritten, are referred toas one-time programmable (OTP) NVM devices. OTP NVM devices are oftenused for embedded NVM applications because of their compatibility toexisting processes, scalability, reliability, and security. Depending onthe target application, device requirements, or process requirements,OTP NVM devices may be implemented using floating gate, e-fuse, orantifuse technology.

In various examples, electrical connections to individual NVM devicesmay be formed during a back-end-of-line (BEOL) fabrication process. In aBEOL process, a network of conductive metal interconnect layers (e.g.,such as copper) is formed to connect various components of asemiconductor integrated circuit (IC). The network of conductive metalinterconnect layers is formed within an interlayer dielectric (ILD)material that may include a low-K dielectric material. The ILD materialelectrically isolates adjacent metal interconnect layers from eachother, both within a given interconnect level and between adjacentlevels of interconnect layers. By way of example, damascene processessuch as single damascene processes and dual-damascene processes areroutinely used for fabricating multi-level interconnect structures. In adamascene process, trenches and via holes are formed inside and throughan ILD layer, and filled with a conductive material (e.g., such ascopper or a copper-based alloy), to create metallization lines andvertical conductive paths (vias) between adjacent interconnect layers.

FIG. 1 provides a layout view of a portion 101 of a semiconductor memorystructure 100. In some embodiments, the portion 101 may be a memory cellof the semiconductor memory structure 100. In some embodiments, thesemiconductor memory structure 100 may include an array of memory cells,each being similar or dissimilar from the portion 101. The portion 101illustrates an active region 104, gate structures 108, 110, 112, 114,116, 118, 120, 122 formed on the active region 104, and metal lines104-1, 104-2, 104-3, 104-4, 104-5, 104-6, 104-7, as well as the programword line nodes (WLP0, WLP1) and the read word line nodes (WLR0, WLR1)associated with the active region 104. In the depicted embodiments, themetal lines 104-1, 104-2, 104-3, 104-4, 104-5, 104-6, 104-7 are formedwithin a same conductive/interconnect layer (e.g., such as within ametal-0 (M0) interconnect layer). FIG. 1 also illustrates cut metalregions 190. In some examples, the cut metal regions 190 includedielectric regions that are used to electrically isolate metal layersthat contact source/drain regions of neighboring active regions.

In some embodiments, the portion 101 of the semiconductor memorystructure is formed on a semiconductor substrate 102 that may include asilicon substrate, and may include various layers, including conductiveor insulating layers formed on the silicon substrate. The semiconductorsubstrate 102 may include various doping configurations depending ondesign requirements as is known in the art. The semiconductor substrate102 may also include other semiconductors such as germanium (Ge),silicon carbide (SiC), silicon germanium (SiGe), or diamond.Alternatively, the semiconductor substrate 102 may include a compoundsemiconductor and/or an alloy semiconductor. Further, in someembodiments, the semiconductor substrate 102 may include an epitaxiallayer (epi-layer), the semiconductor substrate 102 may be strained forperformance enhancement, the semiconductor substrate 102 may include asilicon-on-insulator (SOI) structure, and/or the semiconductor substrate102 may have other suitable enhancement features.

In some cases, the active region 104 may include fin structures, used toform a fin field-effect transistor (FinFET). In some examples, theactive region 104 may also include doped regions, such as dopedsemiconductor regions, within which transistor source/drain regions maybe formed. In some cases, an ion implantation process may be used tointroduce a dopant species into a semiconductor substrate 102 within theactive region 104. In the depicted embodiments, the active region 104has a width ‘W1’ configured to accommodate multiple metal lines, therebyto reduce bit line resistances. For example, in some embodiments, thewidth ‘W1’ is about 60 nm to about 150 nm. Alternatively, the activeregion 104 may be configured to accommodate only one metal line, therebyto reduce the complexity and fabrication costs. For example, in someembodiments, the width ‘W1’ is about 50 nm to about 70 nm.

In various examples, isolation regions such as shallow trench isolation(STI) regions may be formed on the semiconductor substrate 102 toisolate neighboring devices (e.g., transistors, NVM devices, etc.) fromone another. Such isolation regions may be composed of silicon oxide,silicon nitride, silicon oxynitride, fluorine-doped silicate glass(FSG), a low-k dielectric, combinations thereof, and/or other suitablematerial known in the art. In an embodiment, the isolation regions areformed by etching trenches in the substrate. The trenches may then befilled with isolating material, followed by a chemical mechanicalpolishing (CMP) process. However, other embodiments are possible. Insome embodiments, the isolation regions may include a multi-layerstructure, for example, having one or more liner layers.

As shown, at least some of the gate structures are formed over theactive region 104. By way of example, an array of transistors may beformed at intersections of the gate structures and the active region 104(e.g., such as transistors T1, T2, T3, and T4, noted in FIG. 1), wherethe array of transistors may form an NMV memory array. The gatestructures may function as word lines of the memory array. In someembodiments, the gate structures 108, 110, 112, 114, 116, 118, 120, 122may include a gate dielectric and a gate electrode disposed on the gatedielectric. In some embodiments, the gate dielectric may include aninterfacial layer such as silicon oxide layer (SiO₂) or siliconoxynitride (SiON). In some examples, the gate dielectric includes ahigh-K dielectric layer such as hafnium oxide (HfO₂). Alternatively, thehigh-K dielectric layer may include other high-K dielectrics, such asTiO₂, HfZrO, Ta₂O₃, HfSiO₄, ZrO₂, ZrSiO₂, LaO, AlO, ZrO, TiO, Ta₂O₅,Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO,AlSiO, HfTaO, HfTiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides(SiON), other suitable material, or combinations thereof. In still otherembodiments, the gate dielectric may include silicon dioxide or othersuitable dielectric. In various embodiments, the gate electrode includesa conductive layer such as tungsten (W), titanium (Ti), titanium nitride(TiN), titanium aluminum (TiAl), titanium aluminum nitride (TiAlN),tantalum (Ta), tantalum nitride (TaN), tungsten nitride (WN), rhenium(Re), iridium (Ir), ruthenium (Ru), molybdenum (Mo), aluminum (Al),copper (Cu), cobalt (Co), cobalt silicide (CoSi), nickel (Ni), nickelsilicide (NiSi), other suitable compositions, or combinations thereof.In some embodiments, the gate electrode may alternatively oradditionally include a polysilicon layer. In some embodiments, sidewallspacers are formed on sidewalls of the gate structures. Such sidewallspacers may include a dielectric material such as silicon oxide, siliconnitride, silicon carbide, silicon oxynitride, or combinations thereof.

The portion 101 of the semiconductor memory structure further includesmetal lines. In the depicted embodiments, the metal lines 104-1, 104-2,104-3, 104-4, 104-5, 104-6, 104-7 are configured for the active region104. Alternatively, more or fewer metal lines may be configured for theactive region 104. In the depicted embodiments, the metal lines areformed within a same conductive/interconnect layer, such as the metal-0(M0) interconnect layer. Alternatively, one or more of the metal linesmay be formed in a different interconnect layer. The metal lines 104-1,104-2, 104-3, 104-4, 104-5, 104-6, 104-7 may include copper, aluminum,or other appropriate metal or metal alloy.

As illustrated in FIG. 1, metal line 104-3 may be electrically connectedto underlying gate structure 112 by a conductive via 156 to provide afirst program word line (WLP0) node, and metal line 104-5 may beelectrically connected to underlying gate structure 118 by a conductivevia 158 to provide a second program word line (WLP1) node. Further,metal line 104-1 may be electrically connected to underlying gatestructure 114 by a conductive via 160 to provide a first read word line(WLR0) node, and metal line 104-7 may be electrically connected tounderlying gate structure 116 by a conductive via 162 to provide asecond read word line (WLR1) node.

In some examples, metal line 104-2 may be electrically connected tounderlying active region 104 (e.g., which may include an underlyingsource/drain region) by a conductive via 140, metal line 104-4 may beelectrically connected to underlying active region 104 by a conductivevia 142, and metal line 104-6 may be electrically connected tounderlying active region 104 by a conductive via 144. Although FIG. 1shows conductive vias 140 and 144 outside edges (or circumferences) ofthe active region 104, they may be electrically connected to the activeregion 104 by features omitted from FIG. 1 (such as local contactfeatures). Thus, the metal lines 104-2, 104-4, 104-6 may function as bitlines of the memory device associated with the active region 104.Accordingly, the metal lines 104-2, 104-4, 104-6 may also beinterchangeable referred to as the bit lines 104-2, 104-4, and 104-6.

In the depicted embodiments, the metal lines 104-1, 104-3, 104-5, 104-7may have a width ‘W2’ along the Y-direction of about 10 nm to about 50nm; and the bit lines 104-2, 104-4, 104-6 have a width ‘W3’ of about 10nm to about 30 nm. Additionally, in some embodiments, a spacing ‘S1’between the metal lines connected to the gate structures and adjacentbit lines (e.g., such as between the metal lines 104-2 and 104-3) isabout 10 nm to about 30 nm. In other embodiments, the metal lines 104-1,104-2, 104-3, 104-4, 104-5, 104-6, 104-7 may be configured for multipleactive regions. Accordingly, the metal lines may have greater widths.For example, the metal lines 104-1, 104-3, 104-5, 104-7 may have a widthof about 30 nm to 50 nm; the metal lines 104-2, 104-4, 104-6 may have awidth of about 50 nm to about 70 nm. Moreover, an area of the conductivevias 140, 142, and 144 may be about 400 nm² to about 700 nm²; and anarea of the conductive vias 156, 158, 160, 162 is about 50 nm² to about200 nm².

In some embodiments, the gate structures 112 and 118 may have a width334A along the X-direction. The gate structures 114 and 116 may have awidth 334B along the X-direction. In the depicted embodiments, the gatestructures 112, 114, 116, and 118 each has uniform width along theirrespective lengthwise direction. Because the current flows directionallyalong the width dimension of the gate structures during transistoroperation, the width dimension of the gate structures are alsointerchangeably referred to as the “gate length” dimension. Accordingly,widths 334A and 334B are interchangeably referred to as the gate lengths334A and 334B, respectively. In some approaches, the gate structures mayhave the same width as each other. For example, the widths 334A and 334Bare about the same as each other. However, because the gate structuresmay be subjected to different operation conditions and serve differentfunctions, uniform widths may not provide the optimal functionalities.For example, in the depicted embodiments, gate structures 112 and 118provide for the WLP0 and WLP1 nodes, while the gate structures 114 and116 provide for the WLR0 and WLR1 nodes. A smaller width 334A isbeneficial in that it leads to a smaller gate leakage current (Igi) andprovides a larger read margin for the unprogrammed state (“0” state).More specifically, a smaller gate length 334A (for example, of gatestructure 112) increases the separation from adjacent gate structures(such as gate structures 110 and 114). Accordingly, gate leakage current(Igi) between gate structure 112 and gate structure 110 and/or 114 isreduced. The read margin for the unprogrammed state of the memory cell(or the “0” state) is determined by the difference between the gateleakage current (Igi) and a reference current. Accordingly, the smallergate leakage current results in a greater read margin. Conversely, asmaller gate length 334B may cause punch through in the channel layersbelow the gate structures that provide the WLR0 node and/or WLR1 nodes.For example, during operation, the drain feature of the T2 transistor isconnected to the ground (e.g. having a 0V applied thereon); and thesource feature of the T2 transistor (formed over the gate structure 114)is connected to a relatively high voltage. If the gate length is tooshort, in other words, the channel length is too short, the largevoltage difference may cause punch through in the channel, thereby causemalfunctions. Accordingly, a larger gate length 334B is beneficial forimproved device reliability. In other words, optimal device performancemandates different widths of the gate structures 112 and 118 versusthose of the gate structures 114 and 116. Therefore, the presentdisclosure provides methods to form such gate structures havingdifferent gate lengths 334A and 334B.

FIGS. 2A and 2B are a flow chart of a method 20 for fabricating aportion 201 of a semiconductor memory structure according to variousaspects of the present disclosure. FIGS. 3-10 are diagrammaticcross-sectional views of the portion 201 of the semiconductor memorystructure, along the A-A′ plane of FIG. 1, at different fabricationstages, according to embodiments of the present disclosure.

Referring to block 22 of FIG. 2A and to FIG. 3, a semiconductorworkpiece 200 is received. The semiconductor workpiece 200 includes aportion 201 and a substrate 202. An active region 204 is formed on thesubstrate 202. The substrate 202 and the active region 204 may eachresemble the substrate 102 and active region 104 described above withrespect to FIG. 1, respectively. For example, the active region 204 maybe a fin active region and include a fin structure. The semiconductorworkpiece 200 also includes gate structures 212 and 214 formed on theactive region 204, such as along a direction perpendicular to alengthwise direction of the active region 204. In the depictedembodiments, the active region 204 extends lengthwise along theX-direction (similar to the active region 104 of FIG. 1), and the gatestructures 212 extend lengthwise along the Y-direction (similar to thegate structures 112 of FIG. 1). The gate structure 212 later providesfor a WLP0 node, and the gate structure 214 later provides for a WLR0node. Accordingly, the device region in which the gate structure 212 islocated is referred to as a WLP region 201A; and the device region inwhich the gate structure 214 is located is referred to as a WLR region201B. The gate structure 212 includes a gate stack 223A and gate spacers216A on both sides of the gate stack 223A, and the gate structure 214includes a gate stack 223B and gate spacers 216B on both sides of thegate stack 223B. In the depicted embodiments, the gate structures 212further includes gate spacers 218A on both sides of the gate spacers216A; and the gate structures 214 further includes gate spacers 218B onboth sides of the gate spacers 216B. Alternatively, the gate spacers218A and 218B may be omitted.

The gate stacks 223A and 223B each includes a dummy material, such aspolysilicon. As described later, gate stacks 223A and 223B may be laterreplaced with a metal gate stack. The gate stacks 223A has a widthdimension 314A along the X-direction, for example, between the twosidewall surfaces of the opposing gate spacers 216A. The gate stacks223B has a width dimension 314B along the X-direction, for example,between the two sidewall surfaces of the opposing gate spacers 216B. Insome embodiments, the width dimensions 314A and 314B are substantiallythe same. For example, having the same width dimensions simplifies thedesign and fabrication of the device. The gate spacers 216A and 216B mayinclude a same or different material. In the depicted embodiments, thegate spacers 216A and 216B include a same material. For example, thegate spacers 216A and 216B may include silicon oxide, other suitablematerials, or combinations thereof. Similarly, the gate spacers 218A and218B may include a same or different material. In the depictedembodiments, the gate spacers 218A and 218B include a same material. Forexample, the gate spacers 218A and 218B may include silicon nitride,silicon carbonitride, other suitable materials, or combinations thereof.In some embodiments, the materials, or material compositions of the gatespacers 218A and 218B may differ from that of the gate spacers 216A and216B. This results in etching selectivity and may be beneficial formaintaining device integrity during certain subsequent fabricationprocesses. Moreover, the gate spacers 216A has a width 402A along theX-direction, and the gate spacers 216B has a width 402B along theX-direction. In the depicted embodiments, the widths 402A and width 402Bmay be substantially the same. This simplifies the fabrication of thegate spacers 216A and 216B and may have a cost benefit. Alternatively,in some embodiments, the widths 402A and 402B may be different from eachother. For example, the width 402A may be configured to be greater thanthe width 402B. This may be beneficial for the controlling of therelative width dimensions of the subsequently formed metal gate stacks,as described in detail later.

The gate structures 212 and 214 each define a transistor channel 208Aand 208B, respectively, in the active region 204. The portion 201further includes epitaxial features 206 formed on both sides of thetransistor channels 208A and 208B. In the depicted embodiments, one ofthe epitaxial features 206 (“common epitaxial feature”) is formedbetween the transistor channel 208A and the transistor channel 208B, andis shared by two subsequently formed transistors (for example, T1 andT2). In some embodiments, the epitaxial features 206 may include silicon(Si) or silicon germanium (SiGe). Moreover, the epitaxial features 206may be doped with phosphorous (P) dopant, thereby forming Si:P or SiGe:Pepitaxial features. Additionally, the portion 201 includes interlayerdielectric (ILD) layer 210. In some embodiments, the ILD layer 210includes silicon dioxide. In some embodiments, the ILD layer 210includes materials such as tetraethylorthosilicate (TEOS) oxide,un-doped silicate glass, or doped silicon oxide such asborophosphosilicate glass (BPSG), fused silica glass (FSG),phosphosilicate glass (PSG), boron doped silicon glass (BSG), and/orother suitable dielectric materials.

Referring to block 24 of FIG. 2A and to FIG. 4, the gate stacks 223A and223B are removed in an etching operation, thereby forming gate trenches225A and 225B, respectively. In some embodiments, the etching processare configured to achieve a selectivity between the materials of thegate stacks (e.g. polysilicon) and the gate spacers (e.g. silicondioxide), such that the gate spacers 216A and 216B are used as theetching stop mechanism. Accordingly, the gate trenches 225A and 225Beach maintain the width dimensions 314A and 314B, respectively. Asdescribed above, in the depicted embodiments, the width dimensions 314Aand 314B are substantially the same from each other. Moreover, the gatespacers 216A and 216B each substantially maintain their respect widths402A and 402B, respectively.

Referring to block 26 of FIG. 2A, the method 20 proceeds to recess thegate spacers 216A and 216B by a different amount. As described earlier,in the depicted embodiments, the gate trenches 225A and 225B havesubstantially the same widths 314A and 314B, respectively. The differentrecessing amounts of the gate spacers 216A and 216B enlarge therespective gate trenches 225A and 225B by a different amount, such thatthe enlarged gate trenches are of different widths. Accordingly,subsequently formed gate stacks therein have different widths. FIG. 2Billustrate two ways to achieve this result, referred to as methods 26Aand 26B, respectively.

Referring to block 26A-1 of FIG. 2B and to FIG. 5, a mask element 220 isformed over the WLP region 201A. The mask element 220 fills the gatetrench 225A, covers the top surfaces of the gate spacers 216A, 218A, andcovers adjacent portions of the ILD layer 210. Meanwhile, the maskelement 220 leaves the WLR region 201B exposed to subsequent processing.The mask element 220 may be any suitable mask element and can be formedusing any suitable method. For example, the mask element may be aphotoresist.

Referring to block 26A-2 of FIG. 2B and still to FIG. 5, an etchingoperation 502 is performed on the portion 201 that recesses the gatespacers 216B exposed in the WLR region 201B. For example, prior to theetching operation 502, the gate trench 225B has a width dimension 314B(see FIG. 4). After the etching operation 502, the gate trench isenlarged and becomes the enlarged gate trench 226B having a widthdimension 324B. The width dimension 324B is greater than the widthdimension 314B. Meanwhile, the width of the gate spacers 216B is reducedfrom width 402B before the etching operation to width 412B after theetching operation 502. The width 412B is less than the width 402B, andthe difference between the width 412B and the width 402B is designatedas Δ₁. Meanwhile, because the WLP region 201A is covered and protectedby the mask element 220, the gate spacers 216A are unaffected. In someembodiments, the difference Δ₁ is about 0.25 nm to about 1.5 nm.Accordingly, a difference between the width 314B and 324B is twice Δ₁,and is about 0.5 nm to about 3.0 nm. As described later, the differenceΔ₁ determines the width difference between the subsequently formed gatestructures. If the Δ₁ is too small, such as less than 0.25 nm, thebenefit resulting from such difference may be too small to justify theadditional processing cost. Conversely, if the Δ₁ is too large, such asgreater than 1.5 nm, the advanced technology nodes may not havesufficient physical size to accommodate such size difference withoutcompromising other device features. In some embodiments, the number ofetching cycles and time duration for each of the etching cycles aretuned to adjust the amount of etching of the gate spacers 216B.Referring to block 26A-3 of FIG. 2B, after the etching operation 502 iscompleted, the mask element 220 is removed using any suitable method.Accordingly, both WLP region 201A and the WLR region 201B are exposed.

Referring to block 26A-4 of FIG. 2B and to FIG. 6, another etchingoperation 504 is performed on the portion 201 that recesses both thegate spacers 216A and the gate spacers 216B. As described above, in thedepicted embodiments, the gate spacers 216A and 216B includesubstantially the same material. Accordingly, the etching operation 504affects the gate spacers 216A and 216B to substantially the same extent.For example, substantially the same amount of dielectric material isremoved from the gate spacers 216A and from the gate spacers 216B. Inthe depicted embodiments, after the etching operation 504, the gatespacers 216A has width 414A, and the gate spacers 216B has width 414B.In some embodiments, the width 414A is about 1 nm to about 10 nm; andthe width 414B is about 1 nm to about 10 nm. A difference Δ₂ between thewidth 414A and 402A may be substantially the same as the difference Δ₃between the width 414B and 412B. In some embodiments, a ratio of the Δ₁to the Δ₃ (or Δ₂) may be about 2:1 to about 4:1. If this ratio is toosmall, such as less than 2:1, there may be insufficient differencebetween the width of the gate structures 212 and 214. Accordingly, thebenefits described above with respect to the differentiated gate lengthsmay not be effectively achieved.

Accordingly, the difference Δ₄ between the width 414B and 402B isgreater than the difference Δ₂ between the width 414A and 402A. Asillustrated in FIG. 6, the gate trench 225A is enlarged into theenlarged gate trench 227A, having a width 334A; and the gate trench 226Bis further enlarged into the enlarged gate trench 227B, having a width334B. The width 334B is greater than the width 334A. For example, adifference between the widths 334B and 334A is twice the difference Δ₁.In other words, a difference between the widths 334B and 334A is about0.5 nm to about 3 nm. In some embodiments, the width 334A may be about 5nm to about 30 nm; and the width 334B may be about 5.5 nm to about 33nm. If the width 334A and/or the width 334B is too small, resistancesmay increase which causes unacceptable drops of voltage across thelength of the lines; if the width 334A and/or the width 334B is toolarge, the downscaling effort may be unnecessarily impeded. Similar tothe etching operation 502, the number of etching cycles and timeduration for each of the etching cycles are tuned to adjust the amountof etching of the gate spacers 216A and 216B during the etchingoperation 504.

Although the disclosure above describes performing the etching operation502 prior to the etching operation 504, in some embodiments, it mayinstead be performed following the etching operation 504. In suchembodiments, gate spacers 216A and 216B are both recessed by a sameamount in the etching operation 504. Subsequently, the gate spacers 216Bare subject additional recessing which does not affect the gate spacers216A.

As described above, alternatively, method 26B may be used to form gatetrenches of different widths. The method 26B proceeds from theprocessing stage associated with the block 24 of FIG. 2A and FIG. 4.Referring to block 26B-1 of FIG. 2B and to FIG. 7, a patterned maskelement 230 is formed on the portion 201. The patterned mask element 230has openings of different sizes in different regions. For example, thepatterned mask element may have an opening with a width 334A′ along theX-direction in the WLP region 201A, and may further have an opening witha width 334B′ along the X-direction in the WLR region 201B. The widths334A′ and 334B′ determine the width dimensions of the subsequentlyformed gate structures (such as width dimensions 334A and 334B describedlater). The width 334A′ is greater than the width dimension 314A; andthe width 334B′ is greater than the width dimension 314B. In thedepicted embodiments, the opening of the patterned mask element 230 isconfigured to be located symmetrically on the gate spacers. In otherwords, the distance (along the X-direction) between the exposed sidewallof a gate spacer 216A and the sidewall of the patterned mask element 230immediately above it is substantially the same as the correspondingdistance between the exposed sidewall of the opposing gate spacer 216Aand the sidewall of the patterned mask element 230 immediately above it.In some embodiment, this distance corresponds to the difference Δ₂′ .Similarly, the distance along the X-direction between the sidewall of agate spacer 216B and the sidewall of the patterned mask element 230immediately above it is substantially the same as the correspondingdistance between the sidewall of the opposing gate spacer 216B and thesidewall of the patterned mask element 230 immediately above it. In someembodiment, this distance corresponds to the difference Δ₄′ . In someembodiments, the mask element 230 is designed to result in a differenceΔ₄′ from the difference Δ₂′. For example, the difference Δ₄′ is greaterthan the difference Δ₂′ by about 0.25 nm to about 1.5 nm (referred to asthe ΔΔ). If the ΔΔ is too small, such as less than 0.25 nm, the benefitresulting from such difference may be too small to justify theadditional processing cost. Conversely, if the ΔΔ is too large, such asgreater than 1.5 nm, the advanced technology nodes may not havesufficient physical size to accommodate such size difference withoutcompromising other device features. Alternatively, the openings of thepatterned mask element 230 is configured to be located asymmetrically onthe gate spacers. In such embodiments, the difference Δ₂′ and differenceΔ₄′ refers to the average of the two distances between the exposedsidewall of a gate spacer 216A and the respective sidewall of thepatterned mask element 230 immediately above it.

Referring to block 26B-2 of FIG. 2B and still to FIG. 7, an etchingoperation 506 is conducted on the portion 201 through the openings ofthe patterned mask element 230, such that portions of the gate spacers216A and 216B are removed. The etching operation 506 enlarges the gatetrenches 225A and 225B to enlarged gate trenches 227A and 227Brespectively. The enlarged gate trenches 227A and 227B may each have awidth dimension 334A and 334B, respectively. In some embodiments, thewidth dimensions 334A and 334B are determined by the widths of theopenings of the patterned mask element 230. As a result, the widthdimension 334A may be less than the width dimension 334B. For example, adifference between the width dimension 334A and the width dimension 334Bmay be twice the ΔΔ, in other words, about 0.5 nm to about 3 nm.

In some embodiments, referring to FIG. 8, the mask element 230 may beconfigured such that the edges of the opening in the WLR region 201Balign with the interface of the gate spacers 216B and 218B. Accordingly,the width dimension 402B equals to Δ₄′, and the gate spacers 216B arecompletely removed during the etching operation 506. This provides agate trench 227B that has sidewalls defined by sidewalls of the gatespacers 218B. In such embodiments, the sizes of the openings of the maskelement 230 still dictates the widths of both the enlarged trenches 227Aand 227B.

In some embodiments, while the width of the enlarged trench 227A isdefined by the opening of the mask element 230, that of the enlargedtrench 227B is instead defined by the gate spacers 218B. As describedabove, the gate spacers 216A, 216B may have different materials than thegate spacers 218A, 218B. Accordingly, an etching selectivity may beachieved by properly choosing the etching condition such that theetching rate of the gate spacers 216A, 216B is substantially greater(such as at least ten times greater) than the etching rate of the gatespacers 218A, 218B. For example, gate spacers 216A, 216B may includesilicon oxide, while the gate spacers 218A, 218B may have siliconnitride. In some embodiments, this etching selectivity may be used tocontrol the size of the enlarged gate trench 227B. For example,referring to FIG. 9, the mask element 230 may be configured to haveopening sidewalls landing on the top surface of the gate spacers 216A inthe WLP region 201A, while landing on the top surface of the gatespacers 218B in the WLR region 201B. Accordingly, the etching operation506 in the WLP region 201A is confined by the openings of the maskelement 230; while that in the WLR region 201B is confined not only bethe openings of the mask element 230, but also by the gate spacers 218Bbased on its smaller etching rate (or etching resistance) towards theetching operation 506. As a result, the etching operation in the WLRregion 201B may be configured to stop at an interface between the gatespacers 216B and 218B, before reaching the limitation imposed by theopening of the mask element 230. In other words, the etching operationterminates when the sidewall surfaces of the gate spacer 218B areexposed. Therefore, while the opening size of the mask element 230dictates the width of the enlarged gate trench 227A in the WLP region201A, the width of the enlarged gate trench 227B is instead dictated bythe distance between the opposing sidewalls of the gate spacers 218B. Inother words, the etching operation 506 may be configured to use the maskelement 230 as the etching mask in the WLP region 201A, and to use thegate spacer 218B as the etching mask in the WLR region 201B.

After the desired widths of the enlarged gate trenches 227A and 227B arereached, the method 20 proceeds to form the replacement metal gatestacks 229A and 229B in the enlarged gate trenches 227A and 227B,respectively. Referring to block 28 of FIG. 2A, and FIG. 8, a gatedielectric layer is formed in the enlarged gate trenches 227A, 227B andon the transistor channels 208A, 208B, respectively. The gate dielectriclayer includes any suitable dielectric materials, such as a high-kdielectric material. For example, the gate dielectric layer may includehafnium oxide (HfO₂), Al₂O₃, lanthanide oxides, TiO₂, HfZrO, Ta₂O₃,HfSiO₄, ZrO₂, ZrSiO₂, other suitable material, or combinations thereof.The gate dielectric layer may be formed by ALD and/or other suitablemethods. In some embodiments, an interfacial layer is formed tointerpose between the gate dielectric layer and the transistor channels208A and/or 208B. Moreover, gate electrodes may be formed in the gatetrenches and on the gate dielectric layer. The gate electrode mayinclude tungsten (W), titanium nitride (TiN), tantalum nitride (TaN),tungsten nitride (WN), rhenium (Re), iridium (Ir), ruthenium (Ru),molybdenum (Mo), aluminum (Al), copper (Cu), cobalt (Co), nickel (Ni),other suitable conductive materials, or combinations thereof. Thereplacement metal gate stack 229A has the width dimension 334A, and thegate stack 229B has the width dimension 334B. A difference between thewidth dimensions 334A and 334B is about 0.5 nm to about 3 nm.

As the disclosure above provides, in some embodiments, the gate spacers218A, 218B may define the sidewalls of the enlarged gate trenches 227B.In other words, the gate spacers 216B may be removed entirely.Accordingly, referring to FIG. 11, the gate stack 229B may directlyinterface with the gate spacer 218B, while the gate stack 229A directlyinterfaces with the gate spacer 216A.

Accordingly, the gate structure 212 has a width dimension 334A along theX-direction; and the gate structure 214 has a width dimension 334B alongthe X-direction. The width dimension 334A is less than the widthdimension 334B. As described above, the smaller width dimension 334Aprovides the WLP0 node a small gate length, such that the gate-inducedleakage is minimized; the larger width dimension 334B provides the WLR0node a greater gate length, such that the risk of punch through ismitigated.

FIG. 12 is a layout view of the portion 201 of the semiconductor memorystructure 200. Referring to blocks 30 and 32 of FIG. 2A and to FIG. 12,via feature 256 is formed on the gate structure 212; and via feature 260is formed on the gate structure 214. In some embodiments, the viafeature 256 has a dimension along the X-direction that approximatelymatches the width dimension 334A of the gate structure 212; and/or thevia feature 260 has a dimension along the X-direction that approximatelymatches the width dimension 334B of the gate structure 214. In someembodiments, the interfacial resistance between two conductive featuresis determined by the surface area of the interface. Having matcheddimensions between the via features and the gate structures allows theinterfacial resistances to be minimized. Accordingly, the via features256 and 260 each have a size that roughly scales with the widthdimensions of the gate structures on which they overlay, such that thesize of via feature 256 (represented by, for example, the surface areaof an XY cross-section of the via feature 256) is less than the size ofvia feature 260. For example, a ratio of the size for the via feature212 to the size for the via feature 214 may be about 1:1 to about 4:1.If the ratio is too small or too large, the interfacial resistances maynot be minimized. Furthermore, metal line 204-3 is formed on the viafeature 256; and metal line 204-1 is formed on the via feature 260.Accordingly, WLP0 node is formed from the gate structure 212 and theoverlaying metal line 204-3; and WLR0 node is formed from the gatestructure 214 and the overlaying metal line 204-1. As illustrated inFIG. 12, additional WLP nodes and additional WLR nodes may be furtherformed from gate structures (such as gate structures 218 and 216,respectively) that incorporate features described above. Bit linessimilar to the metal lines 104-2, 104-4, and/or 104-6 are further formedto connect to the active regions 204. Additionally, referring to block34 of FIG. 2A, various other features are formed to complete thefabrication of the semiconductor memory device 200.

The various embodiments described herein offer several advantages overthe existing art. It will be understood that not all advantages havebeen necessarily discussed herein, no particular advantage is requiredfor all embodiments, and other embodiments may offer differentadvantages. For example, embodiments discussed herein include asemiconductor memory structure having a design that provides a programword line (WLP) with a width 334A, a read word line (WLR) with a width334B, where the width 334A is less than the width 334B. In other words,the gate length for the WLP is less than the gate length for the WLR. Asa result of the disclosed semiconductor memory structure design, thegate leakage current (Igi) is reduced by a factor of three (3), and theread margin is improved by a factor of 3.3. In some embodiments, thesemiconductor memory structure disclosed herein includes an OTP NVMdevice. However, in some cases, the semiconductor memory structure mayin some cases include other types of NVM devices. Additional details ofembodiments of the present disclosure are provided below, and additionalbenefits and/or other advantages will become apparent to those skilledin the art having benefit of the present disclosure.

In one general aspect, the present disclosure is directed to asemiconductor device. The semiconductor device includes a program wordline and a read word line over an active region. Each of the programword line and the read word line extends along a line direction.Moreover, the program word line engages a first transistor channel andthe read word line engages a second transistor channel. Thesemiconductor device also includes a first metal line over andelectrically connected to the program word line and a second metal lineover and electrically connected to the read word line. The semiconductordevice further includes a bit line over and electrically connected tothe first active region. Additionally, the program word line has a firstwidth along a channel direction perpendicular to the line direction; theread word line has a second width along the channel direction; and thefirst width is less than the second width.

In some embodiments, a difference between the first width and the secondwidth is about 0.5 nm to about 3 nm. In some embodiments, the firstmetal line is electrically connected to the program word line using afirst conductive via, and the second metal line is electricallyconnected to the read word line using a second conductive via. The firstconductive via has a first area at an interface between the first metalline and the program word line; and the second conductive via has asecond area at an interface between the second metal line and the readword line. Moreover, a ratio of the first area to the second area isabout 1:1 to about 4:1. In some embodiments, the semiconductor devicefurther includes a first source/drain feature connected to the firsttransistor channel and the second transistor channel. Additionally, thefirst source/drain feature includes an n-type dopant. In someembodiments, the first metal line, the second metal lines and the bitline are within a same interconnect layer. In some embodiments, thesemiconductor device further includes a first gate spacer of a spacermaterial on both sides of the program word line, and a second gatespacer of the spacer material on both sides of the read word line. Thefirst gate spacer has a first width along the channel direction; thesecond gate spacer has a second width along the channel direction; andthe first width is greater than the second width. In some embodiments,the semiconductor device also includes a third gate spacer of a firstdielectric material on both sides of the program word line; a fourthgate spacer of the first dielectric material on both sides of the readword line; and a fifth gate spacer of a second dielectric materialinterposing between the first gate spacer and a sidewall surface of theprogram word line. Moreover, the second gate spacer directly contacts asidewall surface of the read word line. In some embodiments, the firstwidth is about 5 nm to about 30 nm.

In one general aspect, the present disclosure is directed to a device.The device includes a substrate, a first gate structure and a secondgate structure over an active region of the substrate. The first and thesecond gate structures extend in parallel and adjacent to each other.The first gate structure engages a first channel between a firstsource/drain feature and a second source/drain feature on the substrate,and the second gate structure engages a second channel between thesecond source/drain feature and a third source/drain feature. Moreover,the device also includes a bit line electrically connected to the thirdsource/drain feature. The first gate structure has a first gate lengthalong a first direction between the first source/drain feature and thesecond source/drain feature. The second gate structure has a second gatelength along the first direction. Furthermore, the first gate length isless than the second gate length.

In some embodiments, a difference between the first gate length and thesecond gate length is about 0.5 nm to about 3 nm. In some embodiments,the device further includes a first metal line and a second metal line.The first metal line extends perpendicular to the first and the secondgate structures and electrically connected to the first gate structurethrough a first conductive via; and the second metal line extendsperpendicular to the first and the second gate structures andelectrically connected to the second gate structure through a secondconductive via. Moreover, the first conductive via has a firstcross-section area on a plane parallel to a top surface of thesubstrate, the second conductive via has a second cross-section area onthe plane, and a ratio of the first area to the second area is about 1:1to about 4:1. In some embodiments, the device further includes a firstgate spacer on a sidewall surface of the first gate structure, and asecond gate spacer on a sidewall surface of the second gate structure.The first gate spacer has a first spacer thickness, the second gatespacer has a second spacer thickness, and a difference between the firstspacer thickness and the second spacer thickness is about 0.25 nm toabout 1.5 nm.

One general aspect of the present disclosure is directed to a method. Aworkpiece is received. The workpiece includes a first gate structureinterposing between a first source/drain feature and a secondsource/drain feature, a second gate structure interposing between thesecond source/drain feature and a third source/drain feature. The firstgate structure includes a first dummy gate and a first gate spacer onsidewall surfaces of the first dummy gate, and the second gate structureincludes a second dummy gate and a second gate spacer on sidewallsurfaces of the second dummy gate. The first and the second dummy gatesare removed to form a first gate trench and a second gate trench,respectively. The first gate spacer is recessed by a first amount alonga first direction and the second gate spacer is recessed by a secondamount along the first direction. The first amount is less than thesecond amount. A gate dielectric layer is formed in the first gatetrench and in the second gate trench. A first gate electrode is formedin the first gate trench. And a second gate electrode is formed in thesecond gate trench.

In some embodiments, a first metal line is formed which is electricallyconnected to the first gate structure. A second metal line is formedwhich is electrically connected to the second gate structure. A bit lineis formed which is electrically connected to the third source/drainfeature. In some embodiments, the recessing includes first forming amask element over the first gate structure; then recessing the secondgate spacer by a third amount along the first direction; then removingthe mask element; and subsequently recessing the first gate spacer andthe second gate spacer each by the first amount. Moreover, a sum of thefirst amount and the third amount equals the second amount. In someembodiments, a ratio of the third amount to the first amount is about2:1 to about 4:1. In some embodiments, the recessing includes adjustinga number of etching cycles and a time duration for each of the etchingcycles to tune the first amount and the second amount. In someembodiments, the method further includes forming a mask element over thesubstrate. The mask element has a first opening of a first dimensionalong the first direction over the first gate structure and a secondopening of a second dimension along the first direction over the secondgate structure. Moreover, the recessing includes recessing throughopenings of the mask element. The first dimension is less than thesecond dimension, the first dimension determines the first amount, andthe second dimension determines the second amount. In some embodiments,a difference between the first dimension and the second dimension isabout 0.5 nm to about 30 nm. In some embodiments, the method furtherincludes forming a first metal line electrically connected to the firstgate structure, a second metal line electrically connected to the secondgate structure; and forming a third metal line electrically connected tothe third source/drain feature.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a programword line and a read word line over an active region, each extendingalong a line direction, the program word line engaging a firsttransistor channel and the read word line engaging a second transistorchannel; and a first metal line over and electrically connected to theprogram word line; a second metal line over and electrically connectedto the read word line; and a bit line over and electrically connected tothe first active region, wherein the program word line has a first widthalong a channel direction perpendicular to the line direction, the readword line has a second width along the channel direction, and whereinthe first width is less than the second width.
 2. The semiconductordevice of claim 1, wherein a difference between the first width and thesecond width is about 0.5 nm to about 3 nm.
 3. The semiconductor deviceof claim 1, wherein the first metal line is electrically connected tothe program word line using a first conductive via, the first conductivevia having a first area at an interface between the first metal line andthe program word line, wherein the second metal line is electricallyconnected to the read word line using a second conductive via, thesecond conductive via having a second area at an interface between thesecond metal line and the read word line, and wherein a ratio of thefirst area to the second area is about 1:1 to about 4:1.
 4. Thesemiconductor device of claim 1, further comprising a first source/drainfeature connected to the first transistor channel and the secondtransistor channel, the first source/drain feature including an n-typedopant.
 5. The semiconductor device of claim 1, wherein the first metalline, the second metal lines and the bit line are within a sameinterconnect layer.
 6. The semiconductor device of claim 1, furthercomprising a first gate spacer of a spacer material on both sides of theprogram word line, and a second gate spacer of the spacer material onboth sides of the read word line, wherein the first gate spacer has afirst width along the channel direction, the second gate spacer has asecond width along the channel direction, and wherein the first width isgreater than the second width.
 7. The semiconductor device of claim 1,further comprising: a third gate spacer of a first dielectric materialon both sides of the program word line; a fourth gate spacer of thefirst dielectric material on both sides of the read word line; a fifthgate spacer of a second dielectric material interposing between thefirst gate spacer and a sidewall surface of the program word line,wherein the second gate spacer directly contacts a sidewall surface ofthe read word line.
 8. The semiconductor device of claim 1, wherein thefirst width is about 5 nm to about 30 nm.
 9. A device, comprising, asubstrate; a first gate structure and a second gate structure over anactive region of the substrate and extending in parallel and adjacent toeach other, the first gate structure engaging a first channel between afirst source/drain feature and a second source/drain feature on thesubstrate, and the second gate structure engaging a second channelbetween the second source/drain feature and a third source/drainfeature; and a bit line electrically connected to the third source/drainfeature, wherein the first gate structure has a first gate length alonga first direction between the first source/drain feature and the secondsource/drain feature, the second gate structure has a second gate lengthalong the first direction, and the first gate length is less than thesecond gate length.
 10. The device of claim 9, wherein a differencebetween the first gate length and the second gate length is about 0.5 nmto about 3 nm.
 11. The device of claim 9, further comprising: a firstmetal line extending perpendicular to the first and the second gatestructures and electrically connected to the first gate structurethrough a first conductive via; a second metal line extendingperpendicular to the first and the second gate structures andelectrically connected to the second gate structure through a secondconductive via; wherein the first conductive via has a firstcross-section area on a plane parallel to a top surface of thesubstrate, the second conductive via has a second cross-section area onthe plane, and a ratio of the first area to the second area is about 1:1to about 4:1.
 12. The device of claim 9, further comprising a first gatespacer on a sidewall surface of the first gate structure, and a secondgate spacer on a sidewall surface of the second gate structure, whereinthe first gate spacer has a first spacer thickness, the second gatespacer has a second spacer thickness, and a difference between the firstspacer thickness and the second spacer thickness is about 0.25 nm toabout 1.5 nm.
 13. A method, comprising: receiving a workpiece having: afirst gate structure interposing between a first source/drain featureand a second source/drain feature, a second gate structure interposingbetween the second source/drain feature and a third source/drainfeature, wherein the first gate structure includes a first dummy gateand a first gate spacer on sidewall surfaces of the first dummy gate,and the second gate structure includes a second dummy gate and a secondgate spacer on sidewall surfaces of the second dummy gate, removing thefirst and the second dummy gates to form a first gate trench and asecond gate trench, respectively; recessing the first gate spacer by afirst amount along a first direction and the second gate spacer by asecond amount along the first direction, the first amount being lessthan the second amount; forming a gate dielectric layer in the firstgate trench and in the second gate trench; forming a first gateelectrode in the first gate trench; and forming a second gate electrodein the second gate trench.
 14. The method of claim 13, furthercomprising: forming a first metal line electrically connected to thefirst gate structure; forming a second metal line electrically connectedto the second gate structure; forming a bit line electrically connectedto the third source/drain feature.
 15. The method of claim 13, whereinthe recessing includes: forming a mask element over the first gatestructure; after forming the mask element, recessing the second gatespacer by a third amount along the first direction; after recessing thesecond gate spacer by the third amount, removing the mask element; afterremoving the mask element, recessing the first gate spacer and thesecond gate spacer each by the first amount, wherein a sum of the firstamount and the third amount equals the second amount.
 16. The method ofclaim 15, wherein a ratio of the third amount to the first amount isabout 2:1 to about 4:1.
 17. The method of claim 13, wherein therecessing includes adjusting a number of etching cycles and a timeduration for each of the etching cycles to tune the first amount and thesecond amount.
 18. The method of claim 13, further comprising forming amask element over the substrate, the mask element having a first openingof a first dimension along the first direction over the first gatestructure and a second opening of a second dimension along the firstdirection over the second gate structure, wherein the recessing includesrecessing through openings of the mask element, wherein the firstdimension is less than the second dimension, and wherein the firstdimension determines the first amount, and the second dimensiondetermines the second amount.
 19. The method of claim 18, wherein adifference between the first dimension and the second dimension is about0.5 nm to about 30 nm.
 20. The method of claim 13, further comprising:forming a first metal line electrically connected to the first gatestructure, a second metal line electrically connected to the second gatestructure; and forming a third metal line electrically connected to thethird source/drain feature.